vishay bzm55..series document number 85597 rev. 7, 10-jun-03 vishay semiconductors www.vishay.com 1 9612315 silicon epitaxial planar z-diodes features ? saving space hermetic sealed parts electrical data identical with the devices bzt55..series / tzm..series fits onto sod 323 / sod 110 footprints very sharp reverse characteristic low reverse current level very high stability low noise available with tighter tolerances applications voltage stabilization mechanical data case: micromelf weight: 12.3 mg packaging codes/options: tr / 2.5k per 7" reel, 12.5k/box tr3 / 10k per 13" reel, 10k/box absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter te s t c o n d i t i o n symbol value unit power dissipation r thja 300 k/w p v 500 mw z-current i z p v /v z ma junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c parameter tes t co nd iti on symbol value unit junction ambient mounted on epoxy-glass hard tissue, fig. 1 r thja 500 k/w junction tie point 35 m copper clad, 0.9 mm 2 copper area per electrode r thjl 300 k/w parameter tes t co nd iti on symbol min typ. max unit forward voltage i f = 200 ma v f 1.5 v
www.vishay.com 2 document number 85597 rev. 7, 10-jun-03 vishay bzm55..series vishay semiconductors electrical characteristics bzm55c.. 1) t p 10 ms, t/t p > 1000. *) additionnal measurement of voltage group 9v1 to 75 at 95 % v zmin 35 na at t j 25 c partnumber zener voltage range 1) dynamic resistance tes t current temperature coefficient tes t current reverse leakage current v z @ i zt r zjt @ i zt , f = 1k hz r zjk @ i zk , f = 1k hz i zt tk vz i zk i r @t amb = 25 c i r @ t amb = 150c @ v r v ? ma %/k ma a v min max min max bzm55c2v4 2.28 2.56 < 85 < 600 5 -0.09 -0.06 1 < 50 < 100 1 bzm55c2v7 2.5 2.9 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1 bzm55c3v0 2.8 3.2 < 90 < 600 5 -0.08 -0.05 1 < 4 < 40 1 bzm55c3v3 3.1 3.5 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55c3v6 3.4 3.8 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55c3v9 3.7 4.1 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55c4v3 4 4.6 < 90 < 600 5 -0.06 -0.03 1 < 1 < 20 1 bzm55c4v7 4.4 5 < 80 < 600 5 -0.05 0.02 1 < 0.5 < 10 1 bzm55c5v1 4.8 5.4 < 60 < 550 5 -0.02 0.02 1 < 0.1 < 2 1 bzm55c5v6 5.2 6 < 40 < 450 5 -0.05 0.05 1 < 0.1 < 2 1 bzm55c6v2 5.8 6.6 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzm55c6v8 6.4 7.2 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzm55c7v5 7 7.9 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzm55c8v2 7.7 8.7 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzm55c9v1 * 8.5 9.6 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzm55c10 * 9.4 0.6 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzm55c11 * 10.4 11.6 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzm55c12 * 11.4 12.7 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzm55c13 * 12.4 14.1 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzm55c15 * 13.8 15.6 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzm55c16 * 15.3 17.1 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzm55c18 * 16.8 19.1 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzm55c20 * 18.8 21.2 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzm55c22 * 20.8 23.3 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzm55c24 * 22.8 25.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzm55c27 * 25.1 28.9 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzm55c30 * 28 32 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzm55c33 * 31 35 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzm55c36 * 34 38 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzm55c39 * 37 41 < 90 < 500 2.5 0.04 0.12 0.5 < 0.1 < 5 30 bzm55c43 * 40 46 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzm55c47 * 44 50 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzm55c51 * 48 54 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzm55c56 * 52 60 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzm55c62 * 58 66 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzm55c68 * 64 72 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzm55c75 * 70 79 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
vishay bzm55..series document number 85597 rev. 7, 10-jun-03 vishay semiconductors www.vishay.com 3 electrical characteristics bzm55b.. 1) t p 10 ms, t/t p > 1000. *) additionnal measurement of voltage group 9v1 to 75 at 95 % v zmin 35 na at t j 25 c partnumber zener voltage range 1) dynamic resistance tes t current temperature coefficient te s t current reverse leakage current v z @ i zt r zjt @ i zt , f = 1k hz r zjk @ i zk , f = 1k hz i zt tk vz i zk i r @t amb = 25c i r @t amb = 150c @ v r v ? ma %/k ma a v min max min max bzm55b2v4 2.35 2.45 < 85 < 600 5 -0.09 -0.06 1 < 50 < 100 1 bzm55b2v7 2.64 2.76 < 85 < 600 5 -0.09 -0.06 1 < 10 < 50 1 bzm55b3v0 2.94 3.06 < 90 < 600 5 -0.08 -0.05 1 < 4 < 40 1 bzm55b3v3 3.24 3.36 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55b3v6 3.52 3.68 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55b3v9 3.82 3.98 < 90 < 600 5 -0.08 -0.05 1 < 2 < 40 1 bzm55b4v3 4.22 4.38 < 90 < 600 5 -0.06 -0.03 1 < 1 < 20 1 bzm55b4v7 4.6 4.80 < 80 < 600 5 -0.05 0.02 1 < 0.5 < 10 1 bzm55b5v1 5 5.20 < 60 < 550 5 -0.02 0.02 1 < 0.1 < 2 1 bzm55b5v6 5.48 5.72 < 40 < 450 5 -0.05 0.05 1 < 0.1 < 2 1 bzm55b6v2 6.08 6.32 < 10 < 200 5 0.03 0.06 1 < 0.1 < 2 2 bzm55b6v8 6.66 6.94 < 8 < 150 5 0.03 0.07 1 < 0.1 < 2 3 bzm55b7v5 7.35 7.65 < 7 < 50 5 0.03 0.07 1 < 0.1 < 2 5 bzm55b8v2 8.04 8.36 < 7 < 50 5 0.03 0.08 1 < 0.1 < 2 6.2 bzm55b9v1 * 8.92 9.28 < 10 < 50 5 0.03 0.09 1 < 0.1 < 2 6.8 bzm55b10 * 9.8 10.20 < 15 < 70 5 0.03 0.1 1 < 0.1 < 2 7.5 bzm55b11 * 10.78 11.22 < 20 < 70 5 0.03 0.11 1 < 0.1 < 2 8.2 bzm55b12 * 11.76 12.24 < 20 < 90 5 0.03 0.11 1 < 0.1 < 2 9.1 bzm55b13 * 12.74 13.26 < 26 < 110 5 0.03 0.11 1 < 0.1 < 2 10 bzm55b15 * 14.7 15.30 < 30 < 110 5 0.03 0.11 1 < 0.1 < 2 11 bzm55b16 * 15.7 16.30 < 40 < 170 5 0.03 0.11 1 < 0.1 < 2 12 bzm55b18 * 17.64 18.36 < 50 < 170 5 0.03 0.11 1 < 0.1 < 2 13 bzm55b20 * 19.6 20.40 < 55 < 220 5 0.03 0.11 1 < 0.1 < 2 15 bzm55b22 * 21.55 22.45 < 55 < 220 5 0.04 0.12 1 < 0.1 < 2 16 bzm55b24 * 23.5 24.5 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 18 bzm55b27 * 26.4 27.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 20 bzm55b30 * 29.4 30.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 22 bzm55b33 * 32.4 33.6 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 24 bzm55b36 * 35.3 36.7 < 80 < 220 5 0.04 0.12 1 < 0.1 < 2 27 bzm55b39 * 38.2 39.8 < 90 < 500 2.5 0.04 0.12 1 < 0.1 < 5 30 bzm55b43 * 42.1 43.9 < 90 < 600 2.5 0.04 0.12 0.5 < 0.1 < 5 33 bzm55b47 * 46.1 47.9 < 110 < 700 2.5 0.04 0.12 0.5 < 0.1 < 5 36 bzm55b51 * 50 52.0 < 125 < 700 2.5 0.04 0.12 0.5 < 0.1 < 10 39 bzm55b56 * 54.9 57.1 < 135 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 43 bzm55b62 * 60.8 63.2 < 150 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 47 bzm55b68 * 66.6 69.4 < 200 < 1000 2.5 0.04 0.12 0.5 < 0.1 < 10 51 bzm55c75 * 73.5 76.5 < 250 < 1500 2.5 0.04 0.12 0.5 < 0.1 < 10 56
www.vishay.com 4 document number 85597 rev. 7, 10-jun-03 vishay bzm55..series vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. total power dissipation vs. ambient temperature figure 2. typical change of working voltage under operating conditions at t amb =25c figure 3. temperature coefficient of vz vs. z-voltage 0 40 80 120 160 0 100 300 400 500 600 p ?total power dissipation ( mw) tot t amb ? ambient t emperature(c ) 200 95 9602 200 0 5 10 15 20 1 10 100 1000 v ?voltagechange( mv ) z v z ? z-voltag e(v) 25 95 9598 i z =5ma t j =25c 0102030 ?5 0 5 10 15 tk ?temperature coefficient of v ( 10 /k) vz v z ? z-voltag e(v) 50 95 9600 40 z ?4 i z =5ma figure 4. diode capacitance vs. z-voltage figure 5. typical change of working voltage vs. junction temperature figure 6. forward current vs. forward voltage 0 5 10 15 0 50 100 150 200 c ? diode capacitance ( pf ) d v z ? z-voltag e(v) 25 95 9601 20 t j =25c v r =2v ?60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ? relative voltagechange ztn t j ? junction temperature (c ) 240 95 9599 v ztn =v zt /v z (25c) tk vz =10 x 10 ?4 /k 8x10 ?4 /k ?4 x 10 ?4 /k 6x10 ?4 /k 4x10 ?4 /k 2x10 ?4 /k ?2 x 10 ?4 /k 0 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i ? forward current ( ma) f v f ? forward voltag e(v) t j =25c
vishay bzm55..series document number 85597 rev. 7, 10-jun-03 vishay semiconductors www.vishay.com 5 figure 7. z-current vs. z-voltage figure 8. z-current vs. z-voltage figure 9. differential z-resistance vs. z-voltage 04 81216 20 95 9604 0 20 40 60 80 100 i ? z-current ( ma) z v z ? z-voltag e(v) p tot =500mw t amb =25c 15 20 25 30 0 10 20 30 40 50 i ? z-current ( ma) z v z ? z-voltag e(v) 35 95 9607 p tot =500mw t amb =25c 0 5 10 15 20 1 10 100 1000 r ? differential z-resistance ( ? ) z v z ? z-voltag e(v) 25 95 9606 t j =25c i z =1ma 5ma 10ma figure 10. board for r thja definition (in mm) figure 11. recommended foot pads (in mm) figure 12. recommended foot pads (in mm) 25 10 0.71 1.3 1.27 9.9 0.152 0.355 1.2 0.8 2.4 0.8 0.8 16773 reflow soldering 1.4 1.0 2.8 0.9 0.9 16774 wave soldering
www.vishay.com 6 document number 85597 rev. 7, 10-jun-03 vishay bzm55..series vishay semiconductors package dimensions in mm 1 10 100 1000 z ?thermalresistance for pulsecond.(k/w ) thp t p ? pulse length ( ms ) 95 9603 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax ?t amb i zm =(?v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) x figure 13. thermal response 96 12072
vishay bzm55..series document number 85597 rev. 7, 10-jun-03 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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